The MT40A512M16LY-062E is a Dynamic Random-Access Memory (DRAM) IC manufactured by Micron Technology. Here are the details of this component:
- Manufacturer: Micron Technology
- Part Number: MT40A512M16LY-062E
- Type: IC DRAM (Dynamic Random-Access Memory)
- Capacity: 8 Gigabits (8 Gbit) - equivalent to 1 Gigabyte (GB)
- Interface: Parallel
- Package: 96-FBGA (Fine-pitch Ball Grid Array)
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DataSheet MT40A512M16LY-062E AUT:E TR PDF
Key Features:
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Dynamic Random-Access Memory (DRAM): DRAM is a type of volatile memory where data is stored in capacitors that must be periodically refreshed.
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Capacity: The MT40A512M16LY-062E has a capacity of 8 gigabits, which is equivalent to 1 gigabyte (GB) of memory.
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Interface: Utilizes a parallel interface for communication, enabling data to be transferred in parallel across multiple lines.
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Package Type (96-FBGA): The 96-FBGA package stands for Fine-pitch Ball Grid Array, a type of integrated circuit packaging that uses an array of solder balls for connections.
Main Uses and Applications:
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Computer Systems: Used in computer systems, servers, and workstations for main memory (RAM) to store data and program instructions for faster access.
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Consumer Electronics: Found in various consumer electronics devices like smartphones, tablets, and gaming consoles to provide memory for applications and data storage.
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Networking Equipment: Deployed in networking devices such as routers, switches, and network appliances to facilitate data processing and packet buffering.
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Embedded Systems: Integrated into embedded systems for industrial control, automotive applications, medical devices, and more to store program data and parameters.
Working Principle:
The DRAM IC stores data in cells consisting of a capacitor and a transistor, where the capacitor holds the data in the form of electrical charges. The data needs to be refreshed periodically to prevent information loss. The parallel interface allows for the simultaneous transfer of multiple bits of data, enhancing data throughput.
Additional Information:
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Refresh Rate: DRAM requires periodic refreshing due to the leakage of charge in the storage capacitors. Refresh signals are sent to maintain stored data integrity.
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Data Access Speed: DRAM provides fast access to data stored in memory but is typically slower than SRAM (Static RAM) due to its architecture.
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Power Consumption: DRAM consumes more power compared to SRAM but offers higher storage densities, making it suitable for applications requiring larger memory capacities.
Integration and Design Considerations:
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Memory Controller: Often paired with a memory controller that manages data transfer between the DRAM and the processor.
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Timing Considerations: Ensure proper timing specifications are met to maintain data integrity and system stability.
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PCB Layout: Follow design best practices for high-speed memory interfaces to minimize signal degradation and ensure reliable data transfer.
For detailed specifications, electrical characteristics, timing diagrams, and application guidelines, refer to the datasheet provided by Micron Technology for the MT40A512M16LY-062E DRAM IC.
